Item specifics
Description
The SVF12N65F is an N-channel enhancement-mode power MOSFET from Silan, housed in a TO-220F fully isolated package. It is rated at 650V V_DSS and 12A continuous drain current, with R_DS(on) typical 0.64Ω @ V_GS=10V (680mΩ max), Q_g 33nC, C_iss 1.39nF, and a low C_rss of 15pF. Fabricated using Silan’s proprietary F-Cell structure VDMOS technology, the device minimizes on-resistance while delivering superior switching performance and ruggedness against high-energy pulses during avalanche and commutation. The TO-220F package electrically isolates the heatsink tab from the drain, eliminating the need for insulating pads in shared-heatsink or grounded-heatsink designs. Typical applications include AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.
| Model | SVF12N65F |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-to-Source Voltage (Vdss) | 650 V |
| Continuous Drain Current (Id) | 12 A |
| RDS(on) | 640 mΩ (Typical @VGS=10V) / 680 mΩ (Max) |
| Gate Threshold Voltage (VGS(th)) | 4 V (@250μA) |
| Gate Charge (Qg) | 33 nC (@10V) |
| Input Capacitance (Ciss) | 1.39 nF |
| Reverse Transfer Capacitance (Crss) | 15 pF |
| Output Capacitance (Coss) | 156 pF |
| Max Power Dissipation (Pd) | 51 W (TO-220F limitation) |
| Operating Junction Temp (TJ) | -55℃ ~ +150℃ |
| Package | TO-220F (TO-220IS, Isolated) |
| Process | F-Cell VDMOS |
Typical Applications
AC-DC switching power supplies (adapters, chargers, industrial power modules)
DC-DC converters and Power Factor Correction (PFC) circuits
High-voltage H-bridge PWM motor drives
Small power inverters and UPS
LED driver power supplies
FAQ
Q: What is the difference between the TO-220F package and a standard TO-220?
A: TO-220F (also called TO-220IS) is an isolated TO-220 package where the metal backplate is electrically isolated from the internal drain. It eliminates the need for extra insulating pads when mounting to a shared heatsink, simplifying assembly and meeting safety requirements. The trade-off is slightly higher thermal resistance than non-isolated TO-220, so the rated power dissipation is typically limited to around 51W.
Q: What switching frequency is this MOSFET suitable for?
A: The SVF12N65F has low gate charge (33nC) and reverse transfer capacitance (15pF), making it suitable for medium-to-high frequency switching applications. The practical usable frequency depends on the gate resistor, thermal conditions, and target efficiency. In typical AC-DC flyback or forward topologies, a good loss balance can be achieved in the tens of kHz to over a hundred kHz range.
Q: How should the drive voltage be set?
A: The RDS(on) specification is given at VGS=10V. A gate drive voltage of 10V to 12V is recommended for full conduction. VGS(th) is about 4V, so ensure the drive level has sufficient margin to avoid overheating from operating in the linear region. If driven directly by an MCU, use a gate driver IC or totem-pole circuit to provide sufficient peak current.
Q: How is the avalanche and dv/dt capability of the SVF12N65F?
A: The datasheet states that it uses an improved process to withstand high-energy pulses during avalanche and commutation, with improved dv/dt capability. In topologies with voltage spikes and freewheeling stress, such as flyback and H-bridge, it is still necessary to use RCD clamps or snubber circuits to control peak voltage and leave derating margin for junction temperature.
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