Item specifics
Description
The IRL40SC228 is a 40V StrongIRFET™ N-Channel power MOSFET from Infineon, housed in a D2PAK-7 (TO-263-7) surface-mount package. It features a drain-to-source voltage (V_DSS) of 40V, an on-resistance R_DS(on) of 0.5mΩ typical / 0.65mΩ maximum at V_GS = 10V and I_D = 100A, a continuous drain current of 557A silicon-limited (360A wire-bond-limited) at T_C = 25°C, a pulsed drain current of 1440A, and a maximum power dissipation of 416W. The device is optimized for logic-level drive with improved gate, avalanche, and dynamic dV/dt ruggedness, enhanced body diode dV/dt and dI/dt capability, and operates over a junction temperature range of -55°C to +175°C. It is lead-free, RoHS compliant, and halogen-free, specifically designed for industrial applications demanding the highest current-carrying capability and power density, including battery-powered circuits, motor drives, synchronous rectification, DC/DC converters, and inverters.
| Model | IRL40SC228 |
| Series | StrongIRFET™ / HEXFET® |
| Device Type | N-Channel Power MOSFET |
| Drain-to-Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) | 557 A (Tc=25℃, Silicon Limited) / 360 A (Wire Bond Limited) |
| Pulsed Drain Current (Idm) | 1440 A |
| RDS(on) | 0.5 mΩ (Typical, @VGS=10V) / 0.65 mΩ (Max, @ID=100A, 10V) |
| Max Power Dissipation (Pd) | 416 W (Tc=25℃) |
| Gate Threshold Voltage (VGS(th)) | Max 2.4 V |
| Gate Charge (Qg) | 307 nC (Typical, @10V) |
| Input Capacitance (Ciss) | 19.68 nF (Typical) |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Operating Junction Temp (TJ) | -55℃ ~ +175℃ |
| Package | D2PAK-7Pin (TO-263-7) |
Typical Applications
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits and battery protection switches
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
FAQs
Q: How should the 557A continuous current rating be interpreted in practice?
A: 557A is the theoretical silicon limit at Tc=25℃. At the package level, the wire-bond limited continuous current is 360A at Tc=25℃. Practical usable current depends on PCB thermal design, ambient temperature, and allowable junction temperature rise. In most industrial applications, conduction losses are calculated from thermal resistance and actual RDS(on) to ensure TJ remains below +175℃.
Q: Is this MOSFET logic-level driven?
A: Yes. The IRL40SC228 is optimized for logic-level drive with a maximum VGS(th) of 2.4V, and operates with 4.5V or 10V gate drive. The datasheet provides RDS(on) specifications at both 4.5V and 10V, enabling direct drive from low-voltage logic interfaces.
Q: How robust is the avalanche and body diode performance?
A: The device features improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA, and enhanced body diode dV/dt and dI/dt capability, making it suitable for motor drives, synchronous rectification, and hard-switched half-bridge/full-bridge topologies with freewheeling and voltage spikes.
Q: What is the difference between D2PAK-7Pin and standard D2PAK-3?
A: D2PAK-7Pin adds extra source pins (Kelvin source or parallel source) to the standard D2PAK footprint, reducing source inductance, improving the gate drive loop, and enhancing current distribution under high current. For high-frequency switching or high-current parallel applications, the 7-pin package typically provides better switching and thermal performance.
Q: What are the typical application scenarios?
A: Primary applications include brushed motor drives, BLDC motor drives, battery-powered circuits, half-bridge/full-bridge topologies, synchronous rectification, resonant mode power supplies, OR-ing redundant power switches, DC/DC and AC/DC converters, and DC/AC inverters.
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