GD5F1GQ5UEYIGR GigaDevice 1Gbit SPI NAND Flash Memory IC Chip WSON-8(6x8)

Model:
GD5F1GQ5UEYIGR
Brand:
GigaDevice
Memory Type:
1Gbit(256M × 4)
Max Clock Frequency:
133MHz
Access Time:
7ns
Block Erase Time:
3ms
Package:
WSON-8
Standby Current:
50μA
Operating Temperature:
-40℃ ~ +85℃
Operating Voltage:
2.7V ~ 3.6V

GD5F1GQ5UEYIGR Product Overview

The GD5F1GQ5UEYIGR is a 1Gbit SPI NAND Flash memory from GigaDevice, manufactured on a 38nm mature process. Housed in a WSON-8 (6×8mm) ultra-compact package with only 8 pins (including VCC and GND), the GD5F1GQ5UEYIGR supports Standard SPI, Dual SPI, Quad SPI, and DTR (Double Transfer Rate) modes, delivering a high-density, cost-effective non-volatile storage solution for embedded systems with a 133MHz maximum clock frequency. Featuring on-chip ECC, the GD5F1GQ5UEYIGR significantly improves product reliability while retaining NAND cost advantages. The GD5F1GQ5UEYIGR series has passed AEC-Q100 automotive-grade certification, making the GD5F1GQ5UEYIGR widely used in automotive gateways, DVRs, smart cockpits, industrial control, and IoT applications.


GD5F1GQ5UEYIGR Key Features

1Gbit Large Storage Capacity: The GD5F1GQ5UEYIGR provides 1Gbit (256M × 4) storage capacity for operating systems, firmware, applications, and user data.

High-Speed SPI Interface: The GD5F1GQ5UEYIGR supports Standard SPI, Dual SPI, Quad SPI, QPI, and DTR modes with clock frequency up to 133MHz. Access time of the GD5F1GQ5UEYIGR is as low as 7ns.

Ultra-Compact WSON-8 Package: The GD5F1GQ5UEYIGR comes in a WSON-8 (6×8mm) ultra-compact package with only 8 pins, ideal for space-constrained PCB designs.

SLC NAND Flash Technology: The GD5F1GQ5UEYIGR features SLC (Single-Level Cell) NAND Flash technology with high reliability and long endurance. Page size of the GD5F1GQ5UEYIGR is 2048 bytes + 128 bytes (spare area) .

Wide Voltage & Temperature Range: The GD5F1GQ5UEYIGR operates from a single 2.7V to 3.6V power supply with industrial temperature range -40℃ to +85℃ (automotive-grade supports -40℃ to +105℃).

Excellent Reliability: The GD5F1GQ5UEYIGR delivers 100,000 program/erase cycles and 10-year data retention.

Ultra-Low Standby Power: Standby current of the GD5F1GQ5UEYIGR is only 50μA.

Advanced Security Features: The GD5F1GQ5UEYIGR integrates an 8K-byte OTP (One-Time Programmable) region and on-chip ECC. The GD5F1GQ5UEYIGR supports bad block management, hardware write protection, read cache, OTP region write protection and locking, software reset, copy-back write, write enable latch, and software write protection.

AEC-Q100 Automotive Certification: The GD5F1GQ5UEYIGR series SPI NAND Flash has passed AEC-Q100 automotive-grade certification for automotive applications.

38nm Mature Process: The GD5F1GQ5UEYIGR is manufactured on a 38nm mature process with a fully domestic supply chain.


GD5F1GQ5UEYIGR Applications

With its high-density storage, ultra-compact package, low power consumption, and high reliability, the GD5F1GQ5UEYIGR is widely used in:

Automotive Electronics: The GD5F1GQ5UEYIGR is suitable for automotive gateways, DVRs (dashcams), smart cockpits, T-box, in-vehicle AV systems, navigation, and ADAS

Industrial Control: The GD5F1GQ5UEYIGR can be deployed in industrial automation equipment, industrial motherboards, PLCs, and monitoring systems

IoT Devices: The GD5F1GQ5UEYIGR is ideal for smart home devices, smart sensors, data acquisition terminals, and IoT gateways

Consumer Electronics: The GD5F1GQ5UEYIGR powers smartphones, tablets, smart wearables, and e-book readers

Communication Equipment: The GD5F1GQ5UEYIGR is used in routers, network modules, and optical communication equipment

Boot Storage: The GD5F1GQ5UEYIGR serves as code storage and boot memory for MCU/MPU systems


GD5F1GQ5UEYIGR Key Advantages

1Gbit High-Density Storage + Ultra-Compact WSON-8 Package: Compared to traditional SPI NOR Flash, the GD5F1GQ5UEYIGR offers higher storage density and lower cost per bit. The WSON-8 (6×8mm) ultra-compact package of the GD5F1GQ5UEYIGR with only 8 pins significantly simplifies PCB layout – an ideal alternative to SPI-NOR and standard parallel NAND Flash.

On-Chip ECC + Bad Block Management: The GD5F1GQ5UEYIGR features built-in ECC error correction, significantly improving product reliability while retaining NAND cost advantages. The GD5F1GQ5UEYIGR supports both hardware and software bad block management for data integrity.

AEC-Q100 Automotive-Grade Certification: The GD5F1GQ5UEYIGR series SPI NAND Flash has passed AEC-Q100 certification, delivering up to 100,000 erase cycles across -40℃ to 105℃ for automotive applications.

133MHz High-Speed SPI Interface: Quad SPI and DTR modes of the GD5F1GQ5UEYIGR with 7ns access time significantly improve system boot speed and firmware upgrade efficiency.

38nm Mature Process + Fully Domestic Supply Chain: From design and development to manufacturing and packaging, all stages of the GD5F1GQ5UEYIGR leverage the domestic supply chain, filling the gap in domestic high-capacity automotive memory.

Ultra-Low Standby Power: The GD5F1GQ5UEYIGR consumes only 50μA standby current – ideal for battery-powered IoT devices and portable products.

Rich Security and Protection Features: The GD5F1GQ5UEYIGR provides 8K-byte OTP region, software/hardware write protection, OTP region write protection and locking, and other security features to prevent data tampering and unauthorized access.


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FAQ

1 What is the GD5F1GQ5UEYIGR chip
The GD5F1GQ5UEYIGR is a 1Gbit (128MB) high capacity serial NAND Flash chip from GigaDevice adopting a WSON-8 no lead package, and is often used to replace large capacity NOR Flash storage solutions.

2 What is the storage capacity of this chip
The storage capacity of the GD5F1GQ5UEYIGR is 1 Gigabit which translates to 128 Megabytes, far exceeding the storage capabilities of typical SPI NOR Flash.

3 What package type and pin count does it use
The GD5F1GQ5UEYIGR adopts a WSON-8 package with 8 pins, making it a very compact ultra thin no lead package that is ideal for space constrained PCB designs.

4 What are the operating voltage and temperature ranges
The operating voltage range of the GD5F1GQ5UEYIGR is 2.7V to 3.6V, and the industrial grade temperature range is from minus 40 degrees Celsius to plus 85 degrees Celsius.

5 What data interfaces and transfer modes are supported
The GD5F1GQ5UEYIGR uses a standard SPI serial interface supporting not only standard single bit SPI transmission but also dual and quad SPI high speed read modes.

6 What application scenarios is this chip suitable for
The GD5F1GQ5UEYIGR is widely used in firmware storage for embedded Linux systems, IoT gateways, industrial control terminals, smart security monitoring devices, and applications requiring large capacity data logging.

7 What are the advantages over traditional SPI NOR Flash
The key advantages of the GD5F1GQ5UEYIGR are its extremely large single chip capacity of 1Gbit and significantly lower cost compared to NOR Flash of the same capacity, allowing huge data storage with a smaller PCB footprint.

8 Does it support on chip ECC and bad block management
Yes, the GD5F1GQ5UEYIGR supports built in hardware ECC engines and follows standard NAND Flash bad block marking mechanisms, making it easy for host controllers to perform bad block management and data security protection.

9 Which mainstream models is it compatible with
The GD5F1GQ5UEYIGR is highly compatible in hardware pinout and basic commands with the Winbond W25N01GV series and equivalent SPI NAND Flash from Micron or Macronix.

10 What design considerations should be noted when using this chip
Special attention must be paid to the operating voltage of the GD5F1GQ5UEYIGR. It uses 2.7V to 3.6V, and you should ensure the host controller supports the appropriate voltage level for proper communication.