Item specifics
Description
GD25Q256EYIGR Product Overview
The GD25Q256EYIGR is a 256Mbit (32MB) industrial-grade SPI NOR Flash memory chip from GigaDevice, housed in a WSON-8-EP package (6×8mm with exposed pad). The GD25Q256EYIGR supports standard SPI, dual SPI, and quad SPI interfaces with a maximum clock frequency of 133MHz, achieving data transfer rates up to 532Mbit/s in quad SPI mode. The GD25Q256EYIGR operates from 2.7V to 3.6V with a standby current of only 16µA. With 100,000 program/erase cycles and 20 years of data retention, the GD25Q256EYIGR operates over an industrial temperature range of -40℃ to +85℃. The GD25Q256EYIGR features a uniform sector architecture with 4KB sector erase (30ms typical) and a page programming time of just 250µs typical. The GD25Q256EYIGR supports XiP (eXecute In Place) operation and integrates a 128-bit unique ID with advanced security features. The GD25Q256EYIGR is widely used in embedded systems, industrial control, communication equipment, IoT, automotive electronics, consumer electronics, and more.
GD25Q256EYIGR Core Features
256Mbit Large Storage Capacity: The GD25Q256EYIGR provides 256Mbit (32MB) storage space, organized as 32M × 8.
SPI Quad Interface: The GD25Q256EYIGR supports standard SPI, dual SPI, and quad SPI interfaces. The GD25Q256EYIGR's quad I/O mode achieves data transfer rates up to 532Mbit/s, dual I/O mode up to 266Mbit/s.
133MHz High-Speed Clock: The GD25Q256EYIGR has a maximum clock frequency of 133MHz with an access time of only 7ns.
Wide Operating Voltage: The GD25Q256EYIGR operates from 2.7V to 3.6V, compatible with 3.3V systems.
Ultra-Low Standby Current: The GD25Q256EYIGR features a standby current of only 16µA.
High Reliability: The GD25Q256EYIGR offers 100,000 program/erase cycles with 20 years of data retention.
Fast Program and Erase: The GD25Q256EYIGR features page programming time of 250µs typical; 4KB sector erase time of 30ms typical; 64KB block erase time of 150ms.
Uniform Sector Architecture: The GD25Q256EYIGR has a uniform 4KB sector erase granularity for efficient file system management.
Multiple Write Protection Functions: The GD25Q256EYIGR supports hardware write protection, software write protection, absolute write protection, and write enable latch.
XiP (eXecute In Place) Support: The GD25Q256EYIGR supports XiP operation with 133MHz high-speed quad SPI reads for direct code execution.
Advanced Security Features: The GD25Q256EYIGR includes a 128-bit unique ID per device with advanced encryption support.
Wide Operating Temperature: The GD25Q256EYIGR covers an industrial temperature range of -40℃ to +85℃.
WSON-8-EP Compact Package: The GD25Q256EYIGR comes in an 8-pin WSON package (6×8mm) with exposed pad for enhanced thermal dissipation and high-density PCB layouts.
GD25Q256EYIGR Applications
The GD25Q256EYIGR is widely used in embedded systems and firmware storage, industrial control and automation, communication equipment, IoT devices, automotive electronics, consumer electronics and portable devices, AI toys and smart home devices, scanning pens and translation pens, and smart speakers. The GD25Q256EYIGR is an excellent choice for these applications due to its high performance and reliability.
GD25Q256EYIGR Key Advantages
256Mbit Large Capacity in WSON-8 Compact Package: The GD25Q256EYIGR provides 32MB storage in a WSON-8-EP (6×8mm) package, saving PCB space while the exposed pad enhances thermal dissipation.
GigaDevice Original Quality with Stable Supply: The GD25Q256EYIGR is a mainstream SPI NOR Flash product from GigaDevice, offering stable domestic supply chain.
133MHz High-Speed Quad SPI for XiP Performance: The GD25Q256EYIGR's up to 133MHz clock frequency with quad SPI interface delivers data transfer rates up to 532Mbit/s. The GD25Q256EYIGR's 7ns access time meets the demands of XiP applications.
Ultra-Low Power and Industrial Wide Temperature: The GD25Q256EYIGR has a standby current of only 16µA. The GD25Q256EYIGR operates from -40℃ to +85℃ for harsh industrial and outdoor environments.
High Reliability and Long Lifespan: The GD25Q256EYIGR provides 100,000 program/erase cycles with 20 years of data retention.
Multiple Write Protections and Security Features: The GD25Q256EYIGR offers hardware/software/absolute write protection. The GD25Q256EYIGR also features a 128-bit unique ID and advanced encryption per device.
WSON-8-EP Package for Easy Soldering and Thermal Management: The GD25Q256EYIGR's WSON-8-EP (6×8mm) package with exposed pad enhances thermal dissipation, suitable for surface mount and high-density PCB designs.
Fast Programming and Erase: The GD25Q256EYIGR features page programming time of only 250µs and 4KB sector erase of only 30ms, significantly improving firmware upgrade and production efficiency.
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FAQ
1. What is GD25Q256EYIGR？
GD25Q256EYIGR is a 256Mbit (32MB) SPI NOR Flash memory from GigaDevice, available in a WSON-8-EP (6×8mm) package. The GD25Q256EYIGR supports standard SPI, dual SPI, and quad SPI interfaces, making it suitable for high-speed code storage and data logging in various embedded systems.
2. What are the key specifications of GD25Q256EYIGR？
Memory Size: The GD25Q256EYIGR offers 256Mbit (32M × 8)
Clock Frequency: The GD25Q256EYIGR runs up to 133MHz
Access Time: 7ns
Interface: The GD25Q256EYIGR supports SPI (Standard/Dual/Quad)
Data Transfer Rate: The GD25Q256EYIGR achieves dual SPI 266Mbit/s, quad SPI 532Mbit/s
Supply Voltage: The GD25Q256EYIGR operates from 2.7V ~ 3.6V
Operating Temperature: -40°C ~ +85°C (industrial grade)
Standby Current: 16µA typical for the GD25Q256EYIGR
Endurance: 100,000 program/erase cycles minimum for the GD25Q256EYIGR
Data Retention: 20 years typical for the GD25Q256EYIGR
3. What package does GD25Q256EYIGR use？
The GD25Q256EYIGR uses a WSON-8-EP (6×8mm) package (8-WSON with exposed pad). This compact surface-mount package is ideal for space-constrained embedded system designs. Standard packaging is Tape & Reel. Moisture Sensitivity Level for the GD25Q256EYIGR is MSL 3 (168 hours). The GD25Q256EYIGR is RoHS compliant.
4. What applications is GD25Q256EYIGR suitable for？
The GD25Q256EYIGR is widely used in AI toys, smart home, high-end smart appliances, scanning pens/translation pens, smart speakers, automotive electronics, medical devices, consumer electronics, IoT devices, and industrial computers. The GD25Q256EYIGR supports XIP (eXecute-In-Place) for code execution directly from Flash.
5. What development tools support GD25Q256EYIGR？
As a standard SPI NOR Flash chip, no dedicated software tools are required. Designers can refer to the GD25Q256EYIGR datasheet available on the GigaDevice website or distributor platforms. SPI/QSPI drivers from mainstream MCUs support the GD25Q256EYIGR.
6. What is the operating temperature range of GD25Q256EYIGR？
The GD25Q256EYIGR's operating temperature range is -40°C to +85°C. This industrial-grade device is suitable for harsh environments.
7. What are the key features of GD25Q256EYIGR？
High-speed quad SPI interface: The GD25Q256EYIGR achieves quad I/O data transfer up to 532Mbit/s
XIP (eXecute-In-Place) support: The GD25Q256EYIGR enables high-speed read for direct code execution
Multiple write protection mechanisms: The GD25Q256EYIGR features hardware and software write protection
Low power consumption: The GD25Q256EYIGR has standby current as low as 16µA
High reliability: The GD25Q256EYIGR provides 100,000 erase/write cycles + 20-year data retention
Uniform 4KB sector architecture: The GD25Q256EYIGR offers flexible erase and program operations
8. What interfaces and transfer rates does GD25Q256EYIGR support？
Standard SPI: The GD25Q256EYIGR supports SCLK, CS#, SI, SO
Dual SPI: The GD25Q256EYIGR achieves transfer rate 266Mbit/s
Quad SPI: The GD25Q256EYIGR achieves transfer rate 532Mbit/s
Operation Timing (typical) : The GD25Q256EYIGR's Page Program takes 250µs, Block Erase (64KB) takes 150ms
9. What are the alternative models for GD25Q256EYIGR？
Alternatives in the same series include GD25Q256DYIGR, GD25Q256EWIGR, and GD25Q256CYIG. Cross-brand alternatives include W25Q256FVEG (Winbond), IS25LP256D-JLLA1 (ISSI), and MT25QL256ABA1EW7-0SIT (Micron).
10. What are the design considerations when using GD25Q256EYIGR？
Power decoupling: Place a 0.1µF ceramic capacitor near the VCC pin for stable power to the GD25Q256EYIGR
Pull-up resistors: Add 10kΩ pull-up resistors on CS, SCLK, and MOSI lines for the GD25Q256EYIGR
WP# and HOLD#/RESET# pins: Tie to VCC (high) if not used — do not leave floating for the GD25Q256EYIGR
Quad SPI mode: Must be configured via the status register; default is standard SPI mode for the GD25Q256EYIGR
PCB layout: The WSON-8-EP (6×8mm) package of the GD25Q256EYIGR has an exposed pad (EP) — connect the EP to ground for improved thermal and electrical performance