IRL40SC228 StrongIRFETTM N-Channel Power MOSFET Analysis:40V StrongIRFET, 0.65mΩ, D2PAK-7 for High-Current Drive
What the IRL40SC228 is
The IRL40SC228 is an N-channel power MOSFET from Infineon’s StrongIRFET™ family, built on HEXFET® trench technology and optimized for low-frequency, high-current drive applications. It is rated for 40V drain-to-source voltage and 557A continuous drain current at Tc=25°C (silicon-limited; wire-bond-limited to 360A), with a maximum on-resistance of 0.65 mΩ at VGS=10V and 0.90 mΩ at VGS=4.5V. The gate threshold voltage is 2.4V maximum, and the device is fully characterized for logic-level drive. It is offered in a D2PAK 7-pin+ package (TO-263-7) with a junction-to-case thermal resistance of 0.36°C/W, operating from −55°C to +175°C junction temperature. The StrongIRFET family is specifically positioned for applications that need ruggedness and current-carrying capability more than high switching frequency.
Core Specifications
| Series | StrongIRFET™ / HEXFET® |
| Device Type | N-channel power MOSFET |
| Drain-Source Voltage Vdss | 40 V |
| Continuous Drain Current Id (silicon limit) | 557 A (Tc=25°C) |
| Continuous Drain Current Id (package/bond-wire limit) | 360 A (Tc=25°C) |
| Continuous Drain Current Id (Tc=100°C) | 393 A (silicon limit) |
| Pulsed Drain Current Idm | 1440 A |
| On-Resistance RDS(on) | 0.5 mΩ (typical, Vgs=10 V, Id=100 A) |
| On-Resistance RDS(on) Maximum | 0.65 mΩ (Vgs=10 V) |
| Gate Threshold Voltage Vgs(th) | 1 V (typical), 2.4 V (maximum) |
| Gate-Source Voltage Vgs | ±20 V |
| Gate Charge Qg | 307 nC (@10 V) |
| Input Capacitance Ciss | 19.68 nF |
| Output Capacitance Coss | 2.305 nF |
| Reverse Transfer Capacitance Crss | 1.575 nF |
| Maximum Power Dissipation Pd | 416 W (Tc=25°C) |
| Operating Junction Temperature Range | -55°C to +175°C |
| Package | D2PAK-7Pin (TO-263-7, 6 leads + tab) |
| Single-Pulse Avalanche Energy EAS | 1275 mJ / 2150 mJ (thermal limit) |
Package and Pin Configuration
IRL40SC228 uses a D2PAK-7Pin (TO-263-7) package, which adds extra source pins to the standard D2PAK (TO-263). The seven pins include six source leads plus one tab. This multi-source-pin design significantly reduces the parasitic inductance of the source path, which is critical for ultra-high-current switching scenarios—lower parasitic inductance means smaller voltage overshoot during switching, a more stable drive loop, and better EMI performance. The large heat-dissipation tab at the bottom of the package is connected to the drain, facilitating effective transfer of the 416 W peak power dissipation through PCB copper or an external heatsink.
The chip is optimized for logic-level drive, with a typical gate threshold voltage of only 1 V, meaning it can achieve full turn-on at a relatively low gate drive voltage. With a 10 V gate drive, the on-resistance reaches the specified 0.5 mΩ; even at lower drive voltages, the device maintains relatively low conduction loss, making interfacing with 3.3 V/5 V logic controllers (such as DSP or MCU PWM outputs) more direct.
Key Features
Extremely low conduction loss. A typical on-resistance of 0.5 mΩ, combined with a current capability in the 557 A class, achieves an extremely low conduction voltage drop. At an operating current of 100 A, the conduction loss is only about 5 W, far lower than conventional MOSFETs with on-resistances of 1 mΩ to 2 mΩ at the same current level. For applications requiring continuous high-current output, such as power tools and motor drives, this directly translates into lower temperature rise and higher system efficiency.
Enhanced ruggedness. IRL40SC228 is strengthened in three dimensions: gate, avalanche, and dynamic dV/dt. The chip's single-pulse avalanche energy withstand capability is up to 2150 mJ (under thermal-limit conditions), meaning that in scenarios such as motor drives and inductive-load turn-off, the device has strong tolerance even when voltage spikes exceed the normal range. The body diode's dV/dt and dI/dt capabilities are also enhanced, making it more reliable as a freewheeling path in synchronous rectification and half-bridge/full-bridge topologies.
Optimized for logic-level drive. With a typical gate threshold voltage of 1 V and a maximum of 2.4 V, IRL40SC228 can be driven directly by 3.3 V or 5 V logic signals without an additional gate-drive boost circuit. With a gate charge of 307 nC, a good balance is achieved between drive loss and switching speed in high-frequency switching applications.
Fully characterized capacitance and avalanche SOA. Infineon has fully characterized the device's input capacitance, output capacitance, reverse transfer capacitance, and avalanche safe operating area (SOA), providing designers with reliable data for high-frequency switching and transient protection design and reducing uncertainty in design margin estimation.
Typical Application Scenarios
Brushed/brushless DC motor drive. This is the core application area of IRL40SC228. Its 557 A current capability and 0.5 mΩ on-resistance make it an ideal choice for the main power switch in power tools, industrial motor controllers, and auxiliary systems for electric vehicles. In brushless DC (BLDC) motor drives, the device can be used in the power stage of half-bridge or full-bridge topologies, enabling efficient commutation with logic-level drive.
Battery-powered circuits and battery management systems. In main-circuit on/off control, load switches, and battery protection circuits of battery packs, the low conduction loss of IRL40SC228 directly translates into longer battery life and lower heat generation. Its logic-level drive characteristics allow convenient direct interfacing with the BMS AFE or MCU.
Synchronous rectification and resonant-mode power supplies. In DC-DC converters, AC-DC power supplies, and the synchronous rectification side of LLC resonant converters, IRL40SC228 can replace Schottky diodes as a synchronous rectifier, greatly reducing rectification loss. Its enhanced body-diode dV/dt and dI/dt capabilities provide better reliability in the high-frequency switching environment of synchronous rectification.
High-current DC-DC conversion and power distribution. In server power supplies, communication power supplies, and high-power-density DC-DC modules, the device can be used for load switches, ORing (redundant power switching), and the power stage of synchronous buck converters. At currents from tens to hundreds of amperes, the 0.5 mΩ on-resistance results in far lower conduction loss than conventional solutions.
DC/AC inverters. In low-voltage inverters (such as automotive inverters and solar micro-inverters), IRL40SC228 can serve as the power switch of the inverter bridge. Its 40 V withstand voltage covers the requirements of 12 V, 24 V, and even 36 V battery systems.
What the MOSFET actually has to survive
A power MOSFET in a production motor drive is not a bench prototype. It is the switch that carries the full load current, absorbs the inductive kickback, and has to keep doing both for years. It has to hold up when the environment stops being friendly.
· Thermal path is the real constraint, not the current rating. The 557A figure is silicon-limited at Tc=25°C; the wire-bond-limited continuous current is 360A. In a real design, the limiting factor is almost never the silicon — it is the junction-to-case thermal resistance (0.36°C/W for this package) and the case-to-sink interface. At 100A and 0.65 mΩ, conduction loss is 6.5W. With RθJC of 0.36°C/W, that is a 2.34°C rise from junction to case — but the case-to-heatsink interface and the PCB copper become the dominant thermal resistances. The D2PAK 7-pin+ package is designed to accept a die up to 20% larger than a standard D2PAK 7-pin, which contributes to 15% lower RDS(on) and up to 39% lower junction-to-PCB thermal resistance compared with the standard footprint.
· Avalanche and dynamic dV/dt ruggedness. Motor drive and synchronous rectification both expose the MOSFET to inductive transients and fast voltage excursions. The IRL40SC228 is characterized for single-pulse avalanche energy (1275 mJ thermally limited, 2150 mJ at 25°C start) and includes an enhanced body diode with improved dV/dt and dI/dt capability. This matters in half-bridge and full-bridge topologies where the body diode conducts during dead time and the recovery behavior affects EMI and reliability.
· Logic-level gate drive compatibility. The threshold voltage is specified at 2.4V maximum, and the device is characterized at both 10V and 4.5V gate drive. This allows direct drive from logic-level gate drivers or low-voltage gate drive circuits without a separate level shifter. The total gate charge is 205 nC typical (307 nC maximum) at VGS=4.5V, which is the number that determines gate drive power and switching speed in the intended low-frequency applications.
· Package footprint and assembly. The D2PAK 7-pin+ (TO-263-7) is designed to be interchangeable with the traditional D2PAK 7-pin footprint and competitor H²PAK packages. This means an existing PCB layout can accept the part without a redesign, which is a meaningful advantage when second-sourcing or upgrading an existing drive design.
Where the IRL40SC228 fits — and where it doesn’t
The IRL40SC228 is the right choice when the design needs the lowest possible conduction loss in a 40V-class MOSFET for high-current, low-frequency switching. Brushed and BLDC motor drives, battery-powered power tools and garden equipment, half-bridge and full-bridge topologies, synchronous rectifiers, resonant-mode power supplies, OR-ing and redundant power switches, and DC/DC and AC/DC converters all fit. Infineon positions the StrongIRFET family specifically for designs where switching frequency is low enough that conduction loss dominates, and where ruggedness under fault conditions is more important than FOM optimization.
It is the wrong choice when the design needs high switching frequency — the OptiMOS family is the better fit there, with lower gate charge relative to RDS(on). It is also the wrong choice when the drain voltage exceeds 40V; the StrongIRFET family extends to 60V, 80V, and 100V for higher-voltage rails, but the 228 is a 40V part.
FAQs
Q1: IRL40SC228 is rated at 557 A, but what current should be used for selection in actual design?
This is a key selection-awareness issue. 557 A is the continuous drain current under silicon-limited conditions, i.e., the current that the silicon die inside the chip can carry provided the junction temperature does not exceed 175°C and the thermal conditions are ideal. However, the actually usable continuous current is also limited by the package and wire-bond limits—the bond-wire-limited continuous current of IRL40SC228 is 360 A (Tc=25°C). In addition, the actual PCB heat dissipation capability, ambient temperature, switching frequency, and conduction duty cycle will further reduce the usable current. Therefore, in engineering selection, 360 A should be used as the package-level continuous current baseline, and derating should then be applied according to actual thermal conditions (PCB copper area, airflow, heatsink). For continuous high-current applications, it is recommended to keep the actual operating current in the 150 A to 250 A range and to use adequate thermal design to ensure sufficient junction temperature margin.
Q2: Does logic-level drive optimization mean it can be driven directly with 3.3 V? What should be noted?
The typical gate threshold voltage of IRL40SC228 is 1 V and the maximum is 2.4 V, so in theory a 3.3 V logic signal can turn the device on. However, note that the 0.5 mΩ on-resistance in the datasheet is specified at Vgs=10 V. With 3.3 V or 5 V drive, the on-resistance will increase somewhat (refer to the "typical on-resistance vs. gate voltage" curve in the datasheet). Therefore, if the specified minimum conduction loss is desired, a 10 V gate drive is recommended; if limited to a 3.3 V logic system, the device can be driven directly while accepting a moderate increase in on-resistance, or a small gate-drive IC can be used to convert the logic level to a 10 V drive to fully exploit the device's low-loss advantage. In addition, in high-frequency switching scenarios, a lower drive voltage reduces switching speed, so the balance between switching loss and conduction loss must be weighed.
Q3: What advantages does the D2PAK-7 package offer over standard D2PAK? What should be noted in soldering and thermal design?
D2PAK-7 (TO-263-7) adds two source pins to the five pins of standard D2PAK (TO-263), for a total of six source leads plus one tab. The core value of multiple source pins is to reduce source parasitic inductance, which is critical at switching currents of hundreds of amperes—parasitic inductance generates voltage spikes at the switching instant (V = L × di/dt), increasing EMI and potentially endangering device safety. Thermal design points: The tab at the bottom of the package is connected to the drain and should be soldered to a large PCB copper area (≥2 square inches recommended; where conditions permit, use multilayer copper and via arrays connected to an internal ground or thermal layer); for continuous high-current applications, an external heatsink is recommended on the tab; the reflow peak temperature should refer to the MSL 1 requirement (260°C). Because MSL 1 has no moisture-sensitivity limitation, baking before soldering is not required, but the storage environment should still be kept dry.
Q4: How should switching loss be evaluated in high-frequency switching applications?
Switching loss evaluation for IRL40SC228 must comprehensively consider gate charge (Qg=307 nC) and output capacitance (Coss=2.305 nF). Switching loss can be roughly divided into two parts: gate-drive loss (Pgate = Qg × Vgs × fsw) and output-capacitance loss (Poss = ½ × Coss × Vds² × fsw; in hard switching, most of the Coss energy is dissipated). At a 100 kHz switching frequency, 10 V gate drive, and 40 V drain-source voltage, the gate-drive loss is about 0.307 mW and the output-capacitance loss is about 184 mW. At currents of hundreds of amperes, conduction loss still dominates, but in high-frequency designs the proportion of switching loss rises significantly. The switching-time parameters provided in the datasheet (turn-on delay 67 ns, turn-off delay 222 ns, rise time 210 ns, fall time 176 ns) can serve as references for drive-circuit design and dead-time setting. For higher-frequency applications, consider using active clamping or soft-switching topologies to reduce switching loss.
Q5: What is the difference between the IRL40SC228 and the IRL40SC209?
Both are 40V StrongIRFET devices in the D2PAK 7-pin+ package. The 228 has a lower maximum RDS(on) — 0.65 mΩ at 10V gate drive versus 0.80 mΩ for the 209 — and a higher wire-bond-limited continuous current (360A versus 300A). The 228 is the flagship of the 40V StrongIRFET line and is the choice when conduction loss is the primary constraint. The 209 is a slightly lower-cost alternative when the 228’s margin is not needed.
Q6: What is the maximum continuous drain current of the IRL40SC228?
The silicon-limited continuous current at Tc=25°C is 557A. The wire-bond-limited continuous current is 360A. In practice, the achievable current depends on the thermal design and the PCB copper area, not the silicon rating alone.
Q7: Is the IRL40SC228 a logic-level MOSFET?
Yes. The gate threshold voltage is 2.4V maximum, and the device is characterized for both 10V and 4.5V gate drive. At 4.5V, maximum RDS(on) is 0.90 mΩ; at 10V, it is 0.65 mΩ. It can be driven directly from logic-level gate drivers without a separate level shifter.
Q8: What is the thermal resistance of the D2PAK 7-pin+ package?
Junction-to-case thermal resistance is 0.36°C/W maximum. Junction-to-ambient on a 1-square-inch PCB is 62°C/W. The D2PAK 7-pin+ package allows a die up to 20% larger than a standard D2PAK 7-pin, contributing to up to 39% lower junction-to-PCB thermal resistance compared with the standard footprint.
Q9: What applications is the StrongIRFET family designed for?
Infineon positions StrongIRFET for low-frequency, high-current drive applications where ruggedness and current-carrying capability matter more than switching speed. Typical uses include brushed and BLDC motor drives, battery-powered power tools, synchronous rectifiers, half-bridge and full-bridge topologies, OR-ing switches, and DC/DC converters.
Q10: Can the IRL40SC228 be used in a high-frequency switching converter?
It is not the optimal choice for high-frequency operation. The StrongIRFET family is optimized for conduction loss, and at higher switching frequencies the gate charge (307 nC maximum at 4.5V) becomes a significant loss contributor. For switching frequencies above roughly 100 kHz, Infineon’s OptiMOS family offers a better RDS(on)×Qg trade-off.
Shenzhen Qixinwei Technology Co., Ltd. focuses on electronic component supply, BOM kitting, part number matching, and supply chain solutions, and can assist in selecting corresponding products according to specific project requirements.